RJK60S5DPQ-E0 Datasheet, Mosfet, Renesas

✔ RJK60S5DPQ-E0 Features

Superjunction MOSFET
Low on-resistance RDS(on) = 0.150  typ. (at ID = 10 A, VGS = 10 V, Ta = 25C)
High speed switching tf = 23 ns typ. (at ID = 10 A, VGS = 10 V,

✔ RJK60S5DPQ-E0 Application

for each Renesas Electronics product depends on the product's quality grade, as indicated below. "Standard":

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Part number:

RJK60S5DPQ-E0

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📄 Datasheet

Description:

High speed power switching mosfet. of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor

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RJK60S5DPQ-E0 High Speed Power Switching MOSFET Renesas