RJK60S7DPQ-E0 Datasheet - Renesas

High Speed Power Switching SJ MOS FET

RJK60S7DPQ-E0 Features

* Superjunction MOSFET

* Low on-resistance RDS(on) = 0.1  typ. (at ID = 15 A, VGS = 10 V, Ta = 25C)

* High speed switching tf = 9 ns typ. (at ID = 15 A, VGS = 10 V, RL = 20 , Rg = 10 , Ta = 25C) Outline RENESAS Package code: PRSS0003ZE-A (Package name: TO-247) D 4 123 G S 1. G

RJK60S7DPQ-E0 General Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. You are fully responsible for the incorporation of these circuits, software, and information in the design of your equipment. Renesa.

RJK60S7DPQ-E0 Datasheet (197.06 KB)