RQJ0306FQDQS Silicon P-Channel MOS FET

Renesas

RQJ0306FQDQS Description

RQJ0306FQDQS Silicon P Channel MOS FET Power Switching .

RQJ0306FQDQS Features

* Low gate drive VDSS :
* 30 V and 2.5 V gate drive
* Low drive current
* High speed switching
* Small traditional power package (UPAK) Outline RENESAS package code: PLZZ0004CA-A (Package name: UPAK R ) 1 2 3 4 1G Notes: Marking is "FQ". Absolute Maximum Rat

RQJ0306FQDQS Applications

* such as the development of weapons of mass destruction or for the purpose of any other military use. When exporting the products or technology described herein, you should follow the applicable export control laws and regulations, and procedures required by such laws and regulations. 4. All informat

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Datasheet Details

Part number: RQJ0306FQDQS
Manufacturer: Renesas ↗
File Size: 106.52 KB
Datasheet: RQJ0306FQDQS-Renesas.pdf
Description: Silicon P-Channel MOS FET

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