UPA2806 - MOS FIELD EFFECT TRANSISTOR

Product Overview

Renesas

Part number	UPA2806
Manufacturer	Renesas
File Size	251.54 KB
Description	MOS FIELD EFFECT TRANSISTOR
Datasheet	UPA2806 Datasheet
Additional preview pages of the UPA2806 datasheet.

R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applications.

Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A).
Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz).
Built-in gate protection diode.
Thin type surface mount package with heat spreader (8-pin HVSON).
RoHS Compliant Ordering Information Part No. LEAD.

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Published: Sep 17, 2013 |