UPA2806 Datasheet, Transistor, Renesas

UPA2806 Features

• Transistor
• Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)
• Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS

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Part number:

UPA2806

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Renesas ↗

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📄 Datasheet

Description:

Mos field effect transistor. R07DS0008EJ0100 Rev.1.00 June 01, 2010 The μ PA2806 is N-channel MOSFET designed for DC/DC converter and power management applicati

UPA2806 Application

• Applications Features
• Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 1

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UPA2806

Renesas

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