UPA2806

MOS FIELD EFFECT TRANSISTOR

Renesas

* Low on-state resistance ⎯ RDS(on)1 = 57 mΩ MAX. (VGS = 10 V, ID = 10 A) ⎯ RDS(on)2 = 70 mΩ MAX. (VGS = 8 V, ID = 10 A)

* Low Ciss: Ciss = 780 pF TYP. (VDS = 10 V, VGS = 0 V, f = 1 MHz)

* Built-in gate protection diode

* Thin type surface mount package with heat spre

UPA2806

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Mos field effect transistor.

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UPA2806 MOS FIELD EFFECT TRANSISTOR Renesas

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