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UPD166015GR Datasheet - Renesas

UPD166015GR, N-Channel MOS

Preliminary Data Sheet PD166015GR MOS INTEGRATED CIRCUIT R07DS0595EJ0100 Rev.1.00 Jan 19, 2012 .
The PD166015 is an N-channel high side driver with built-in charge pump and embedded protection function.
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UPD166015GR-Renesas.pdf

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Datasheet Details

Part number:

UPD166015GR

Manufacturer:

Renesas ↗

File Size:

226.09 KB

Description:

N-Channel MOS

Features

* High temperature operation (Tch = 175°C MAX. )
* Built-in charge pump circuit
* Low on-state resistance RDS(ON) = 100 m MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)
* Built-in protection circuit  Current limitation  Overtemperature protection
* Built-in differential amplifier (gai

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