UPD166015GR

N-Channel MOS

Renesas

UPD166015GR Features

* High temperature operation (Tch = 175°C MAX.)

* Built-in charge pump circuit

* Low on-state resistance RDS(ON) = 100 m MAX. (VIN = VIH, IO = 1.5A, Tch = 25°C)

* Built-in protection circuit  Current limitation  Overtemperature protection

* Built-in differential amplifier (gai

UPD166015GR General Description

The PD166015 is an N-channel high side driver with built-in charge pump and embedded protection function. It is also a linear solenoid driver with a built-in differential amplifier. When device is overtemperature or overcurrent is generated in output MOS, the protection function operates to prevent.

UPD166015GR Datasheet (226.09 KB)