UPD48011336 - Low Latency DRAM
The μPD48011318 is a 67,108,864-word by 18-bit and the μPD48011336 is a 33,554,432-word by 36-bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor eDRAM memory cell.
The Low Latency DRAM-III chip is a 1.1Gbit DRAM capable of a sustained throu
UPD48011336 Features
* 1 cycle 600MHz DDR Muxed Address
* Optional data bus inversion to reduce SSO, SSN, maximum I/O current, and average I/O power
* Training sequence for per-bit deskew
* Selectable Refresh Mode: Auto or Overlapped Refresh
* Programmable PVT-compensated output i
