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HAT2169H Silicon N-Channel MOSFET

HAT2169H Description

HAT2169H Silicon N Channel Power MOS FET Power Switching .

HAT2169H Features

* High speed switching
* Capable of 4.5 V gate drive
* Low drive current
* High density mounting
* Low on-resistance RDS(on) = 2.8 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A) (Package name: LFPAK ) 5 1 234 5 D 4 G SSS 123 REJ03G0119

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Silicon N-Channel MOSFET Renesas Technology
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