RJK0852DPB - Silicon N Channel Power MOS FET

Renesas Technology

RJK0852DPB Datasheet Preview — Preview of RJK0852DPB PDF

Datasheet Details

Part number	RJK0852DPB
Manufacturer	Renesas ↗ Technology
File Size	100.44 KB
Description	Silicon N Channel Power MOS FET
Datasheet	RJK0852DPB-RenesasTechnology.pdf

RJK0852DPB Product details

Description

of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples.

Features

High speed switching.
Capable of 4.5 V gate drive.
Low drive current.
High density mounting.
Low on-resistance RDS(on) = 9 m typ. (at VGS = 10 V).
Pb-free.
Halogen-free Outline.

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Published: Aug 17, 2015 |