* 1) The QS6U22 combines Pch MOSFET with a Schottky barrier diode in a single TSMT6 package. 2) High-speed switching, Low On-resistance. 3) Low voltage drive (2.5V drive). 4) Built-in Low VF schottky barrier diode. 5) Pb-free lead plating ; RoHS compliant. lInner circuit lPackaging specifications
QS6U22
1.31 MB
2.5v drive pch+sbd mosfet.
QS6U22 2.5V Drive Pch+SBD MOSFET Datasheet VDSS RDS(on)(Max.) ID PD -20V 215mΩ ±1.5A 1.25W lOutline TSMT6 lF.
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