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RTQ035N03 - 2.5V Drive Nch MOS FET

RTQ035N03 Description

www.DataSheet4U.com RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TSM.

RTQ035N03 Features

* 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltag

RTQ035N03 Applications

* Switching zPackaging specifications Package Type RTQ035N03 Code Basic ordering unit (pieces) Taping TR 3000 Each lead has same dimensions Abbreviated symbol : QP zInner circuit (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BOD

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Datasheet Details

Part number
RTQ035N03
Manufacturer
ROHM ↗
File Size
74.78 KB
Datasheet
RTQ035N03_Rohm.pdf
Description
2.5V Drive Nch MOS FET

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2.5V Drive Nch MOS FET Rohm
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