RTQ035N03 Datasheet - Rohm

RTQ035N03 2.5V Drive Nch MOS FET

www.DataSheet4U.com RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TSMT6 1.0MAX 0.85 0.7 (1) (2) (3) 1pin mark 0.4 0.16 zApplications Switching zPackaging specifications Package Type RTQ035N03 Code Basic ordering unit (pieces) Taping TR 3000 Each lead has same dimensions Abbreviated symbol : QP zInner circuit (6) (5) (4) ∗2 ∗1 (1) Drain (2) Drain (3) Gate (4) Source (5) Drain (6) Drain (1) (2) ∗1 ESD PROT.

RTQ035N03 Features

* 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltag

RTQ035N03_Rohm.pdf