* 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 3) Low voltage drive (2.5V drive). 2.9 1.9 0.95 0.95 (6) (5) (4) 1.6 2.8 0~0.1 (3) 1/2 RTQ035N03 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol IGSS Gate-source leakage Drain-source breakdown voltag
RTQ035N03 Datasheet (74.78 KB)
RTQ035N03
74.78 KB
2.5v drive nch mos fet.
www.DataSheet4U.com RTQ035N03 Transistors 2.5V Drive Nch MOS FET RTQ035N03 zStructure Silicon N-channel MOS FET zExternal dimensions (Unit : mm) TSM.
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