* 1) Compact (φ3.1mm). 2) High efficiency, high output PO=8.4mW (IF=50mA). 3) Wide radiation angle θ 1/2=±16deg. 4) Peak wavelength well suited to silicon detectors (λP=940nm). 5) Good current-optical output linearity. 6) Long life, high reliability. 2
* 0.5 Min.24 1 (2.5) 2.5±1 2 Max.1
SIR341ST3F Datasheet (83.08 KB)
SIR341ST3F
83.08 KB
Infrared light emitting diode / top view type.
SIR-341ST3F
Sensors
Infrared light emitting diode, top view type
SIR-341ST3F
The SIR-341ST3F is a GaAs infrared light emitting diode housed in clear .
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