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RU1H300Q

N-Channel Advanced Power MOSFET

RU1H300Q Features

* 100V/300A, RDS (ON) =3mΩ(Typ.)@VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Com

RU1H300Q General Description

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID.

RU1H300Q Datasheet (276.92 KB)

Preview of RU1H300Q PDF

Datasheet Details

Part number:

RU1H300Q

Manufacturer:

Ruichips

File Size:

276.92 KB

Description:

N-channel advanced power mosfet.

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RU1H300Q N-Channel Advanced Power MOSFET Ruichips

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