RU1H300Q N-Channel Advanced Power MOSFET

Ruichips

RU1H300Q Description

RU1H300Q N-Channel Advanced Power MOSFET .
G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

RU1H300Q Features

* 100V/300A, RDS (ON) =3mΩ(Typ. )@VGS=10V
* Ultra Low On-Resistance
* Exceptional dv/dt capability
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Com

RU1H300Q Applications

* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching

📥 Download Datasheet

RU1H300Q Datasheet Preview — Preview of RU1H300Q PDF

Datasheet Details

Part number: RU1H300Q
Manufacturer: Ruichips
File Size: 276.92 KB
Datasheet: RU1H300Q-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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