RU1H35S N-Channel Advanced Power MOSFET

Ruichips

RU1H35S Description

RU1H35S N-Channel Advanced Power MOSFET MOSFET .
TO-263 Applications. Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Oth.

RU1H35S Features

* 100V/40A, RDS (ON) =21mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* 100% avalanche tested

RU1H35S Applications

* Switching application N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current

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Datasheet Details

Part number: RU1H35S
Manufacturer: Ruichips
File Size: 286.18 KB
Datasheet: RU1H35S-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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