RU1H36S N-Channel Advanced Power MOSFET

Ruichips

RU1H36S Description

RU1H36S N-Channel Advanced Power MOSFET MOSFET .
TO-263 Applications. DC-DC Converters. Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common.

RU1H36S Features

* 100V/32A, RDS (ON) =34mΩ(Typ. )@VGS=10V
* Super High Dense Cell Design
* Ultra Low On-Resistance
* 100% avalanche tested

RU1H36S Applications

* DC-DC Converters
* Synchronous Rectifier N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diod

📥 Download Datasheet

RU1H36S Datasheet Preview — Preview of RU1H36S PDF

Datasheet Details

Part number: RU1H36S
Manufacturer: Ruichips
File Size: 278.71 KB
Datasheet: RU1H36S-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

📁 Related Datasheet

RU1 - Fast-Recovery Rectifier Diodes (Sanken electric)
RU1890B04 - RF Module (Samsung)
RU1890B04GCA - RF Module (Samsung)
RU1890B04UAA - RF Module (Samsung)
RU1890H04 - RF Module (Samsung)
RU1890H04CAA - RF Module (Samsung)
RU1890H04CDA - RF Module (Samsung)
RU1A - FAST RECOVERY RECTIFIER DIODES (EIC)

📌 All Tags

N-Channel Advanced Power MOSFET Ruichips

Ruichips RU1H36S-like datasheet

RU1H36L - N-Channel Advanced Power MOSFET
RU1H36R - N-Channel Advanced Power MOSFET
RU1H300Q - N-Channel Advanced Power MOSFET
RU1H35K - N-Channel Advanced Power MOSFET
RU1H35L - N-Channel Advanced Power MOSFET
RU1H35Q - N-Channel Advanced Power MOSFET