RU20E60L Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU20E60L, N-Channel Advanced Power MOSFET

D G S TO252 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① I

RU20E60L Features

* 20V/60A, RDS (ON) =6mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* D