RU20T8M7 Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU20T8M7, N-Channel Advanced Power MOSFET

G2S2S2 D1/D2 PIN1 G1S1S1 PIN1 SDFN2050 D1 D2 G1 G2 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward

RU20T8M7 Features

* 20V/8A, RDS (ON) =13mΩ(Typ.)@VGS=4.5V RDS (ON) =14mΩ(Typ.)@VGS=4V RDS (ON) =16mΩ(Typ.)@VGS=3.1V RDS (ON) =18mΩ(Typ.)@VGS=2.5V

* Super High Dense Cell Design

* Fast Switching Speed

* ESD Protected

* 100% avalanche tested

* Lead Free and Green Devices