RU55200Q Datasheet - Ruichips

RU55200Q - N-Channel Advanced Power MOSFET

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

RU55200Q Features

* 55V/200A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V

* Ultra Low On-Resistance

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* High Ef

RU55200Q-Ruichips.pdf