RU55200Q Datasheet - Ruichips

RU55200Q N-Channel Advanced Power MOSFET

G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID.

RU55200Q Features

* 55V/200A, RDS (ON) =3.3mΩ(Typ.)@VGS=10V

* Ultra Low On-Resistance

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* High Ef

RU55200Q-Ruichips.pdf

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Datasheet Details

Part number:

RU55200Q

Manufacturer:

Ruichips

File Size:

271.41 KB

Description:

N-channel advanced power mosfet.

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RU55200Q RU55200Q N-Channel Advanced Power MOSFET Ruichips

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