RU55200Q N-Channel Advanced Power MOSFET

Ruichips

RU55200Q Description

RU55200Q N-Channel Advanced Power MOSFET .
G DS TO247 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-S.

RU55200Q Features

* 55V/200A, RDS (ON) =3.3mΩ(Typ. )@VGS=10V
* Ultra Low On-Resistance
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature

RU55200Q Applications

* High Efficiency Synchronous Rectification in SMPS
* High Speed Power Switching

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Datasheet Details

Part number: RU55200Q
Manufacturer: Ruichips
File Size: 271.41 KB
Datasheet: RU55200Q-Ruichips.pdf
Description: N-Channel Advanced Power MOSFET

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N-Channel Advanced Power MOSFET Ruichips

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