RU55111R Datasheet - Ruichips

N-Channel Advanced Power MOSFET

RU55111R Features

* 55V/110A, RDS (ON) =5mΩ(tpy.)@VGS=10V RDS (ON) =7mΩ(tpy.)@VGS=4.5V

* Super High Dense Cell Design

* Ultra Low On-Resistance

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* DC-DC Converters and Off-line

RU55111R General Description

TO-220 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU55111R Datasheet (283.47 KB)

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Part number:

RU55111R

Manufacturer:

Ruichips

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283.47 KB

Description:

N-channel advanced power mosfet.

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RU55111R N-Channel Advanced Power MOSFET Ruichips

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RU55111R Features

RU55111R General Description

Datasheet Details

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