Part number:
RU55L18L
Manufacturer:
Ruichips
File Size:
290.04 KB
Description:
P-channel advanced power mosfet.
TO252 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain
RU55L18L Features
* -60V/-16A, RDS (ON) =100mΩ(tpy.)@VGS=-10V RDS (ON) =125mΩ(tpy.)@VGS=-4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% avalanche tested
* Lead Free and Green Devices Available (RoHS Compliant) Applications
* Pow
Datasheet Details
RU55L18L
Ruichips
290.04 KB
P-channel advanced power mosfet.
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