RU55L18L Datasheet - Ruichips

RU55L18L - P-Channel Advanced Power MOSFET

TO252 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain

RU55L18L Features

* -60V/-16A, RDS (ON) =100mΩ(tpy.)@VGS=-10V RDS (ON) =125mΩ(tpy.)@VGS=-4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Pow

RU55L18L-Ruichips.pdf