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RU55L18L P-Channel Advanced Power MOSFET

RU55L18L Description

RU55L18L P-Channel Advanced Power MOSFET MOSFET .
TO252 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ.

RU55L18L Features

* -60V/-16A, RDS (ON) =100mΩ(tpy. )@VGS=-10V RDS (ON) =125mΩ(tpy. )@VGS=-4.5V
* Super High Dense Cell Design
* ESD protected
* Reliable and Rugged
* 100% avalanche tested

RU55L18L Applications

* Power Management
* Load Switch

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Datasheet Details

Part number
RU55L18L
Manufacturer
Ruichips
File Size
290.04 KB
Datasheet
RU55L18L-Ruichips.pdf
Description
P-Channel Advanced Power MOSFET

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P-Channel Advanced Power MOSFET Ruichips
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