RU55L18R Datasheet - Ruichips

P-Channel Advanced Power MOSFET

RU55L18R Features

* -60V/-16A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Pow

RU55L18R General Description

TO-220 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain.

RU55L18R Datasheet (316.17 KB)

RU55L18R Datasheet Preview — Preview of RU55L18R PDF

Datasheet Details

Part number:

RU55L18R

Manufacturer:

Ruichips

File Size:

316.17 KB

Description:

P-channel advanced power mosfet.

📁 Related Datasheet

RU55L18L P-Channel Advanced Power MOSFET (Ruichips)

RU55110R N-Channel Advanced Power MOSFET (Ruichips)

RU55111R N-Channel Advanced Power MOSFET (Ruichips)

RU55200Q N-Channel Advanced Power MOSFET (Ruichips)

RU5620A Digitally Programmable Universal Active Filter (EG&G)

RU5H11P N-Channel Advanced Power MOSFET (Ruichips)

RU5H13R N-Channel Advanced Power MOSFET (Ruichips)

RU5H18Q N-Channel Advanced Power MOSFET (Ruichips)

RU5H5L N-Channel Advanced Power MOSFET (Ruichips)

RU5H5P N-Channel Advanced Power MOSFET (Ruichips)

TAGS

RU55L18R P-Channel Advanced Power MOSFET Ruichips

Image Gallery

RU55L18R Features

RU55L18R General Description

Datasheet Details

File Size:

Description:

RU55L18R Distributor