RU55L18R Datasheet - Ruichips

RU55L18R - P-Channel Advanced Power MOSFET

TO-220 P-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain.

RU55L18R Features

* -60V/-16A, RDS (ON) =100mΩ(Typ.)@VGS=-10V RDS (ON) =125mΩ(Typ.)@VGS=-4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Pow

RU55L18R-Ruichips.pdf