RU60450Q - N-Channel Advanced Power MOSFET
G DS TO247 D i G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ①
RU60450Q Features
* 60V/450A, RDS (ON) =1.3mΩ(Typ.)@VGS=10V
* Ultra Low On-Resistance
* Super High Dense Cell Design
* Fast Switching and Fully Avalanche Rated
* 100% avalanche tested
* 175°C Operating Temperature
* Lead Free and Green Devices Available (RoHS Co
