RU60E16L Datasheet - Ruichips

RU60E16L N-Channel Advanced Power MOSFET

TO252 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU60E16L Features

* 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* Reliable and Rugged

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Man

RU60E16L Datasheet (284.19 KB)

RU60E16L Datasheet Preview — Preview of RU60E16L PDF

Datasheet Details

Part number:

RU60E16L

Manufacturer:

Ruichips

File Size:

284.19 KB

Description:

N-channel advanced power mosfet.

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RU60E16L N-Channel Advanced Power MOSFET Ruichips

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