RU60E25K Datasheet (Ruichips) - N-Channel Advanced Power MOSFET

RU60E25K, N-Channel Advanced Power MOSFET

G DS TO251 Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP① 300μs Pu

RU60E25K Features

* 60V/25A, RDS (ON) =30mΩ(Typ.)@VGS=10V RDS (ON) =40mΩ(Typ.)@VGS=4.5V

* ESD protected

* Reliable and Rugged

* Fast Switching Speed

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management