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RU60E16R

N-Channel Advanced Power MOSFET

RU60E16R Features

* 60V/16A, RDS (ON) =60mΩ(Typ.)@VGS=10V RDS (ON) =75mΩ(Typ.)@VGS=4.5V

* Super High Dense Cell Design

* ESD protected

* 100% avalanche tested

* Lead Free and Green Devices Available (RoHS Compliant) Applications

* Power Management Pin Description TO-22

RU60E16R General Description

TO-220 Absolute Maximum Ratings N-Channel MOSFET Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current TC=25°C Mounted on La.

RU60E16R Datasheet (297.00 KB)

Preview of RU60E16R PDF

Datasheet Details

Part number:

RU60E16R

Manufacturer:

Ruichips

File Size:

297.00 KB

Description:

N-channel advanced power mosfet.

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RU60E16R N-Channel Advanced Power MOSFET Ruichips

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