RU60P60R Datasheet (Ruichips) - P-Channel Advanced Power MOSFET

RU60P60R, P-Channel Advanced Power MOSFET

G DS TO220 D G Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink ① ID

RU60P60R Features

* -60V/-60A, RDS (ON) =22mΩ(Typ.)@VGS=-10V

* Low On-Resistance

* Super High Dense Cell Design

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Devices Available (RoHS Complia