Description
G DS
TO220
D G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ Maximum Junction Temperature
TSTG
Storage Temperature Range
IS Diode Continuous Forward Current
Mounted on Large Heat Sink
①
IDP
300μs Pulse Drain Current Tested
②
ID
Continuous Drain Current(VGS=-10V)
PD Maximum Power Dissipation
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient
Drain
Features
- -60V/-60A,
RDS (ON) =22mΩ(Typ. )@VGS=-10V.
- Low On-Resistance.
- Super High Dense Cell Design.
- Fast Switching and Fully Avalanche Rated.
- 100% avalanche tested.
- 175°C Operating Temperature.
- Lead Free and Green Devices Available (RoHS Compliant).
RU60P60R Datasheet
