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RU6888S

N-Channel Advanced Power MOSFET

RU6888S Features

* 68V/88A, RDS (ON) =6mΩ (Typ.) @ VGS=10V

* Ultra Low On-Resistance

* Exceptional dv/dt capability

* Fast Switching and Fully Avalanche Rated

* 100% avalanche tested

* 175°C Operating Temperature

* Lead Free and Green Available Applications

RU6888S General Description

TO-263 N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat S.

RU6888S Datasheet (291.63 KB)

Preview of RU6888S PDF

Datasheet Details

Part number:

RU6888S

Manufacturer:

Ruichips

File Size:

291.63 KB

Description:

N-channel advanced power mosfet.

📁 Related Datasheet

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RU6888S N-Channel Advanced Power MOSFET Ruichips

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