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K7A163630B 512Kx36 & 1Mx18 Synchronous SRAM

K7A163630B Description

K7A163630B K7A161830B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync.SRAM Specification 100TQFP with Pb & Pb-Free (RoHS compl.
The K7A163630B and K7A161830B are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium a.

K7A163630B Features

* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.

K7A163630B Applications

* where Product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply.
* Samsung Electronics reserves the right to change products or specification without notice.

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Datasheet Details

Part number
K7A163630B
Manufacturer
SAMSUNG ELECTRONICS
File Size
400.32 KB
Datasheet
K7A163630B_SAMSUNGELECTRONICS.pdf
Description
512Kx36 & 1Mx18 Synchronous SRAM

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512Kx36 1Mx18 Synchronous SRAM SAMSUNG ELECTRONICS
SAMSUNG ELECTRONICS K7A163630B-like datasheet