HFS4N60 - 600V N-Channel MOSFET

SEMIHOW

Datasheet Details

 Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.0 Ω (Typ. ) @VGS=10V  100% Avalanche Tested TO-220F 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol Parameter Value VDSS ID Drain-Source Voltage Drain Current Drain Current.
C.

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Published: Mar 11, 2015 |