HFS4N60FS - 600V N-Channel MOSFET

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Datasheet Details

TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 2.6 ȍ7S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source V.

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Published: Jun 27, 2016 |