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HFS4N65 N-Channel MOSFET

HFS4N65 Description

HFS4N65 April 2006 HFS4N65 650V N-Channel MOSFET BVDSS = 650 V RDS(on) typ = 2.3 Ω ID = 3.6 * A .

HFS4N65 Features

*  Originative New Design  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 15 nC (Typ. )  Extended Safe Operating Area  Lower RDS(ON) : 2.3 Ω (Typ. ) @VGS=10V  100% Avalanche Teste

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Datasheet Details

Part number
HFS4N65
Manufacturer
SemiHow
File Size
813.23 KB
Datasheet
HFS4N65-SemiHow.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET SemiHow
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