HFS4N65FS - N-Channel MOSFET

SemiHow

Datasheet Details

TO-220F Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 8.5 nC (Typ. ) Extended Safe Operating Area Lower RDS(ON) : 3.0 ȍ7S#9GS=10V 100% Avalanche Tested Single Gauge Package 12 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS EAS IAR EAR PD Drain-Source V.

📁 HFS4N65FS Similar Datasheet

Other Datasheets by SemiHow

Published: Jun 27, 2016 |