Part number: 1N5818WS
Manufacturer: SEMTECH
File Size: 490.43KB
Download: 📄 Datasheet
Description: 1A Surface Mount Schottky Barrier Diode
Cathode Anode
2
Top View Marking Code: 1N5817WS: SK
1N5818 / 5819WS: SL Simplified outline SOD-323 and symbol
Absolute Maximum Ratings (Ta = 25℃) Parameter
Reverse Voltage
1N5817WS 1N5818WS 1N5819WS
Average Forward Rectified Current
Non-Repetit.
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1N5818W - 1A Surface Mount Schottky Barrier Diode
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1N5817W-1N5819W
1A Surface Mount Schottky Barrier Diode
PINNING
PIN 1 2
1
DESCRIPTION Cathode Anode
2
Absolute Maximum Ratings (Ta = 25 OC)
Parame.
1N5818W - Surface Mount Schottky Barrier Rectifiers
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Features
* Reverse voltage - 20 to 40 V * Forward current - 1 A
1N5817W THRU 1N5819W
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A C
B DE
G F
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1N5818W - Schottky Barrier Diodes
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Ƶ Features
ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward v.
1N5818W - Surface Mount Schottky Barrier Rectifier
(SEMTECH)
1N5817W THRU 1N5819W
Surface Mount Schottky Barrier Rectifier
Reverse Voltage - 20 to 40 V Forward Current - 1 A
PINNING PIN 1 2
1
DESCRIP.
1N5818W - SCHOTTKY BARRIER DIODE
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Technical Data Data Sheet N1756, Rev. -
1N5817W-1N5819W SCHOTTKY BARRIER DIODE
Features:
• Metal silicon junction, majority carrier conduction • Guard.
1N5818W - SCHOTTKY BARRIER RECTIFIER
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SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 40 Volts CURRENT 1.0 Ampere
Features • Metal silicon junction, majority carrier conduction • Guarding f.
1N5818W - Schottky Barrier Rectifiers
(BLUE ROCKET ELECTRONICS)
1N5817W~1N5819W
Rev.C Feb.-2015
/ Descriptions ， SOD-123FL 。 Schottky Barrier Rectifiers,SOD-123FL thin package.
DATA SHEET
/ Features ，，，，，，。。 L.
1N5818W - SCHOTTKY DIODES
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1N5817W~1N5819W
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SCHOTTKY DIODES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
DESCRIPTION
The 1N5817W~1N5819W ar.
1N5818W - SCHOTTKY BARRIER RECTIFIER DIODE
(EIC)
1N5817W - 1N5819W
PRV : 20 - 40 Volts IO : 1.0 Ampere
SCHOTTKY BARRIER RECTIFIER DIODES
SOD-123FL
2.9 2.6
1.1
0.8
1.9
1.7
0.2
0.1
MECHANICAL D.
1N5818WS - SCHOTTKY BARRIER RECTIFIERS
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SCHOTTKY BARRIER RECTIFIERS FEATURES • Metal silicon junction, majority carrier conduction • Guarding for overvoltage protec.
