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2N2907 / 2N2907A
PNP Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications.
The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2N2222 and ST 2N2222A are recommended.
On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Base 3. Collector TO-92 Plastic Package
Absolute Maximum Ratings (Ta = 25℃) Parameter
Collector Base Voltage Collector Emitter Voltage
Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range
2N2907 2N2907A
Symbol -VCBO
-VCEO
-VEBO -IC Ptot Tj Tstg
Value 60 40 60 5 600 625 150
- 55 to + 150
Unit V
V
V mA mW ℃ ℃
SEMTECH ELECTRONICS LTD.
2N2907 Datasheet
