2N7000 Small Signal MOSFET 200 mA, 60 V N-Channel Drain Gate Source 1. Source 2.Gate 3.Drain TO-92 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Drain Source Voltage VDSS 60 V Drain-Gate Voltage (RGS = 1 MΩ) VDGR 60 V Gate-source Voltage Continuous VGS ± 20 V Non-repetitive ( tp ≤ 50 μs) VGSM ± 40 V Drain Current Continuous ID 200 mA Pulsed IDM 500 mA Total Power Dissipation PD 350 mW Junction Temperature Tj 150 OC St.
