BU807FI
SGS-THOMSON
159.61kb
Fast switching darlington transistors.
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BU807F - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimu.
BU807FI - NPN Transistor
(INCHANGE)
isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimu.
BU807 - Silicon NPN Power Transistor
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isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High Voltage: VCBO= 330V(Min) ·Low Saturation Voltage-
: VCE(sat)= 1.5V(Max)@ IC= 5A ·Minimu.
BU807 - MEDIUM VOLTAGE NPN TRANSISTORS
(ST Microelectronics)
BU806 ® BU807
MEDIUM VOLTAGE NPN FAST SWITCHING DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
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s NPN DARLINGTONS
s LOW BASE-DRIV.
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BU807 - NPN SILICON DARLINGTON TRANSISTOR
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BU806 BU807
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w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are N.
BU807 - FAST SWITCHING DARLINGTON TRANSISTORS
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BU800 - NPN Transistor
(INCHANGE)
isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.
BU801 - High Voltage Fast Darlington
(ST Microelectronics)
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BU806 - 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BU806/D
NPN Darlington Power Transistor
This Darlington transistor is a high voltage, .