2N2714
SPRAGUE
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(2n2xxx) npn transistor.
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2N2710 - NPN silicon transistor
(Motorola)
2N2710 (SILICON)
NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications for industrial service.
CASE 2.
2N2710 - NPN Small Signal High Speed Low Power Saturating Switch Transistor
(Fairchild)
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2N2711 - (2N2xxx) NPN Transistor
(SPRAGUE)
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2N2712 - (2N2xxx) NPN Transistor
(SPRAGUE)
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2N2713 - (2N2xxx) NPN Transistor
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2N2720 - DUAL AMPLIFIER TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
— Collector Current Continuous
@ Total Device Dissipation.
2N2721 - Dual Amplifier Transistor
(Motorola)
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2N2722 - Dual Amplifier Transistor
(Motorola)
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2N2723 - DARLINGTON TRANSISTOR
(Motorola)
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage (Base 1 and Base 2 open)
Collector-Base Voltage
Emitter-Base Voltage
— Collector Current Continuous
@.
2N2724 - NPN Transistor
(Motorola)
2N2723 thru 2N2725 (SILICON)
CASE 20(8)
(TO-72)
Two NPN silicon annular transistors connected as a darlington amplifier, and designed for applicatio.
