2N2710 Datasheet (Motorola) - NPN silicon transistor

2N2710, NPN silicon transistor

2N2710 (SILICON) NPN silicon transistor primarily designed for high-speed, low-power saturated switching applications for industrial service.

CASE 22 (TO 18) Collector connected to case MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation @ TA = 25° C Derate above 25° C Total Device DisSipation @ T C = 25° C Operating Junction Temperature Range Storage Temperature Range