Part number:
2N3175
Manufacturer:
SSDI
File Size:
27.47 KB
Description:
Pnp transistor.
5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
2N3175
SSDI
27.47 KB
Pnp transistor.
5 AMP PNP
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mh.
📁 Related Datasheet
2N3171 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A .
2N3171 - Bipolar PNP Device
(Seme LAB)
2N3171
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
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2N3171H - PNP Transistor
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isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A .
2N3172 - Silicon PNP Power Transistor
(Inchange Semiconductor)
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DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A .
2N3173 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A .
2N3173 - Bipolar PNP Device
(Seme LAB)
2N3173
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar PNP .
2N3174 - Silicon PNP Power Transistor
(Inchange Semiconductor)
isc Silicon PNP Power Transistor
DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A .
2N3174 - Bipolar PNP Device
(Seme LAB)
2N3174
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44)
6.35 (0.25) 9.15 (0.36)
1.52 (0.06) 3.43 (0.135)
Bipolar PNP .