DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

ST Microelectronics

Description

www.DataSheet4U.com DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data .
The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications.

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Datasheet Specifications

Part number: DB-55008L-318
Manufacturer: STMicroelectronics ↗
File Size: 538.96 KB
Datasheet: DB-55008L-318_STMicroelectronics.pdf
Description: RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

Applications

* Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www. st. com 14 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www. DataSheet4U. c

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power amplifier using PD55008L-E N-channel enhancement-mode lateral MOSFETs ST Microelectronics

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