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DB-55008L-318

RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs

DB-55008L-318 Features

* Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 79 % BeO free amplifier Description The DB-55008L-318 is a common source N-channel enhancement-mode lateral field eff

DB-55008L-318 General Description

The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www.st.com 14 This is prelimin.

DB-55008L-318 Datasheet (538.96 KB)

Preview of DB-55008L-318 PDF

Datasheet Details

Part number:

DB-55008L-318

Manufacturer:

STMicroelectronics ↗

File Size:

538.96 KB

Description:

Rf power amplifier using 1 x pd55008l-e n-channel enhancement-mode lateral mosfets.

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TAGS

DB-55008L-318 power amplifier using PD55008L-E N-channel enhancement-mode lateral MOSFETs ST Microelectronics

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