DB-55008L-318 Datasheet, Mosfets, ST Microelectronics

DB-55008L-318 Features

  • Mosfets
  • Excellent thermal stability Frequency: 225 - 318 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 13.5 ± 0

PDF File Details

Part number:

DB-55008L-318

Manufacturer:

STMicroelectronics ↗

File Size:

538.96kb

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📄 Datasheet

Description:

Rf power amplifier using 1 x pd55008l-e n-channel enhancement-mode lateral mosfets. The DB-55008L-318 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for VHF SEISMIC appl

Datasheet Preview: DB-55008L-318 📥 Download PDF (538.96kb)
Page 2 of DB-55008L-318 Page 3 of DB-55008L-318

DB-55008L-318 Application

  • Applications Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55008L-318 February 2009 Rev 1 1/14 www.st.c

TAGS

DB-55008L-318
power
amplifier
using
PD55008L-E
N-channel
enhancement-mode
lateral
MOSFETs
ST Microelectronics

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