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DB-55015-490

RF power amplifier using 1 x PD55015-E N-channel enhancement-mode lateral MOSFETs

DB-55015-490 Features

* Excellent thermal stability Frequency: 420 - 490 MHz Supply voltage: 13.2 V Output power: 15 W Power gain: 13.5 ± 0.7 dB Efficiency: 51 % - 62 % Load mismatch: 20:1 Beo free amplifier Description The DB-55015-490 is a common source N-channel enhancem

DB-55015-490 General Description

The DB-55015-490 is a common source N-channel enhancement-mode lateral field effect RF power amplifier designed for UHF mobile radio applications. Table 1. Mechanical specification: L = 60 mm, W = 30 mm Device summary Order codes DB-55015-490 March 2009 Rev 1 1/14 www.st.com 14 This is prelimin.

DB-55015-490 Datasheet (467.19 KB)

Preview of DB-55015-490 PDF

Datasheet Details

Part number:

DB-55015-490

Manufacturer:

STMicroelectronics ↗

File Size:

467.19 KB

Description:

Rf power amplifier using 1 x pd55015-e n-channel enhancement-mode lateral mosfets.

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TAGS

DB-55015-490 power amplifier using PD55015-E N-channel enhancement-mode lateral MOSFETs ST Microelectronics

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