M29F400B Datasheet - ST Microelectronics

M29F400B 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory

The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V V CC supply. For Program and Erase operations the necessary high voltages are generated internally. The device can al.

M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.) Program Byte-by-Byte or Word-by-Word Status Register bits and Ready/Busy Output MEMORY BLOCKS Boo.

M29F400B Features

* k or to program data in another block, and then resumed. When power is first applied or if V CC falls below VLKO, the command interface

M29F400B_STMicroelectronics.pdf