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M29F400B - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory

Datasheet Summary

Description

The M29F400 is a non-volatile memory that may be erased electrically at the block or chip level and programmed in-system on a Byte-by-Byte or Wordby-Word basis using only a single 5V V CC supply.

For Program and Erase operations the necessary high voltages are generated internally.

Features

  • k or to program data in another block, and then resumed. When power is first applied or if V CC falls below VLKO, the command interface.

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Datasheet preview – M29F400B

Datasheet Details

Part number M29F400B
Manufacturer STMicroelectronics
File Size 231.73 KB
Description 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
Datasheet download datasheet M29F400B Datasheet
Additional preview pages of the M29F400B datasheet.

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Other Datasheets by ST Microelectronics
  • M29F400T - 4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Single Supply Flash Memory
  • M29F002B - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F002BB - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F002BNT - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F002BT - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F002NT - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F002T - 2 Mbit 256Kb x8 / Boot Block Single Supply Flash Memory
  • M29F010B - 1 Mbit 128Kb x8 / Uniform Block Single Supply Flash Memory

Full PDF Text Transcription

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M29F400T M29F400B 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Single Supply Flash Memory NOT FOR NEW DESIGN M29F400T and M29F400B are replaced respectively by the M29F400BT and M29F400BB 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS FAST ACCESS TIME: 55ns FAST PROGRAMMING TIME – 10µs by Byte / 16µs by Word typical PROGRAM/ERASE CONTROLLER (P/E.C.
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