M36L0T8060T1 - (M36L0T8060B1 / M36L0T8060T1) 256 Mbit Flash memory and 64 Mbit PSRAM
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6 Signal descriptions .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
9 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 2.10 2.11 2.12 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.2
M36L0T8060T1 Features
* Multichip package
* 1 die of 256 Mbit (16 Mb ×16, multiple bank, multilevel, burst) Flash memory 1 die of 64 Mbit (4 Mb ×16) Pseudo SRAM Supply voltage
* VDDF = 1.7 V to 1.95 V
* VDDQF = VCCP = 2.7 V to 3.1 V
* VPPF = 9 V for fast program Electronic signature
* M
