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P4NB100 Datasheet - ST Microelectronics

P4NB100 STP4NB100

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

P4NB100 Datasheet (137.81 KB)

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P4NB100 STP4NB100 ST Microelectronics

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