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P4NB80 Datasheet - STMicroelectronics

P4NB80 STP4NB80

Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptiona.

P4NB80 Datasheet (275.40 KB)

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P4NB80 STP4NB80 STMicroelectronics

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