P6NC80 - STP6NC80

ST Microelectronics

P6NC80 Datasheet Preview — Preview of P6NC80 PDF

Datasheet Details

Part number	P6NC80
Manufacturer	STMicroelectronics ↗
File Size	442.21 KB
Description	STP6NC80
Datasheet	P6NC80_STMicroelectronics.pdf

P6NC80 Product details

Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source.

Features

OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/13 www. DataS.

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Published: Feb 23, 2006 |