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P6NC80

STP6NC80

P6NC80 Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

P6NC80 General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

P6NC80 Datasheet (442.21 KB)

Preview of P6NC80 PDF

Datasheet Details

Part number:

P6NC80

Manufacturer:

STMicroelectronics ↗

File Size:

442.21 KB

Description:

Stp6nc80.
www.DataSheet4U.com STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III .

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