P6NC80 Datasheet - ST Microelectronics

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P6NC80 STP6NC80

www.DataSheet4U.com STP6NC80Z - STP6NC80ZFP STB6NC80Z - STB6NC80Z-1 N-CHANNEL 800V - 1.5Ω - 5.4A TO-220/FP/D²PAK/I²PAK Zener-Protected PowerMESH™III .
The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toba.

P6NC80_STMicroelectronics.pdf

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Datasheet Details

Part number:

P6NC80

Manufacturer:

STMicroelectronics ↗

File Size:

442.21 KB

Description:

STP6NC80

Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

Applications

* APPLICATIONS SINGLE-ENDED SMPS IN MONITORS, COMPUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT s I²PAK (Tabless TO-220) ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) G

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