P6NK90Z Datasheet - ST Microelectronics

P6NK90Z N-CHANNEL MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements .

www.DataSheet4U.com www.DataSheet4U.com STP6NK90Z - STP6NK90ZFP STB6NK90Z N-CHANNEL 900V - 1.56Ω - 5.8A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH™Power MOSFET TYPE STP6NK90Z STP6NK90ZFP STB6NK90Z s s s s s s VDSS 900 V 900 V 900 V RDS(on) <2Ω <2Ω <2Ω ID 5.8 A 5.8 A 5.8 A Pw 140 W 30 W 140 W 3 1 2 TYPICAL RDS(on) = 1.56 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITANCES VERY GOOD MANUFACTURING REPEATIBILITY TO-220 3 1 TO-22.

P6NK90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

P6NK90Z_STMicroelectronics.pdf