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PD20010-E Datasheet - ST Microelectronics

RF Power Transistor

PD20010-E General Description

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linea.

PD20010-E Datasheet (280.01 KB)

Preview of PD20010-E PDF

Datasheet Details

Part number:

PD20010-E

Manufacturer:

STMicroelectronics ↗

File Size:

280.01 KB

Description:

Rf power transistor.

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PD20010-E Power Transistor ST Microelectronics

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