PD20010-E Datasheet, Transistor, ST Microelectronics

✔ PD20010-E Features

Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 20

✔ PD20010-E Application

It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent g

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PD20010-E

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📄 Datasheet

Description:

Rf power transistor. The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain,

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Stock and price

STMicroelectronics

RF MOSFET LDMOS 13.6V PWRSO-10RF

DigiKey

PD20010-E

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Qty : 400 units

Unit Price : $11.93

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PD20010-E Power Transistor ST Microelectronics