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PD20010-E Datasheet - ST Microelectronics

PD20010-E RF Power Transistor

The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linea.

PD20010-E_STMicroelectronics.pdf

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Datasheet Details

Part number:

PD20010-E

Manufacturer:

STMicroelectronics ↗

File Size:

280.01 KB

Description:

Rf power transistor.

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PD20010-E PD20010-E Power Transistor ST Microelectronics

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