PD20015C

Transistors

ST Microelectronics

PD20015C Features

* Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V BeO free package ESD protection In compliance with the 2002/95/EC european directive M243 Epoxy sealed Description The PD20015C is a common source N-channel, enh

PD20015C General Description

The PD20015C is a common source N-channel, enhancement-mode lateral FieldEffect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 2 GHz. PD20015C boasts the excellent gain, linearit.

PD20015C Datasheet (182.73 KB)