PD20015-E

Transistors

ST Microelectronics

PD20015-E Features

* Excellent thermal stability Common source configuration POUT = 15 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20015-E is a common source N-cha

PD20015-E General Description

The PD20015-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20015-E boasts the excellent gain, linea.

PD20015-E Datasheet (302.43 KB)