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STAP57060 RF power transistor

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Description

STAP57060 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs .
The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET.

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Applications

* It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57060 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optmized for RF needs and offers excellent performances

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