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STAP57060

RF power transistor

STAP57060 Features

* Excellent thermal stability Common source configuration POUT = 60 W with 14.3 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10 RF-STAP-package Description The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for hi

STAP57060 General Description

The STAP57060 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57060 boasts the excellent gain, linearity .

STAP57060 Datasheet (292.56 KB)

Preview of STAP57060 PDF

Datasheet Details

Part number:

STAP57060

Manufacturer:

STMicroelectronics ↗

File Size:

292.56 KB

Description:

Rf power transistor.

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STAP57060 power transistor ST Microelectronics

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